Thin-film flip-chip UVB LEDs realized by electrochemical etching
نویسندگان
چکیده
منابع مشابه
Nanorods on surface of GaN-based thin-film LEDs deposited by post-annealing after photo-assisted chemical etching
This study investigates the optoelectronic characteristics of gallium nitride (GaN)-based thin-film light-emitting diodes (TF-LEDs) that are formed by a two-step transfer process that involves wet etching and post-annealing. In the two-step transfer process, GaN LEDs were stripped from sapphire substrates by the laser lift-off (LLO) method using a KrF laser and then transferred onto ceramic sub...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2020
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.5143297